050-5994 rev a 5-2004 apt10030l2vfr 1000v 33a 0.300 ?? ?? ? maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 16.5a) zero gate voltage drain current (v ds = 1000v, v gs = 0v) zero gate voltage drain current (v ds = 800v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 1000 0.300 250 1000 100 24 apt10030l2vfr 1000 33 132 3040 833 6.66 -55 to 150 300 3350 3200 g d s power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. to-264 max package avalanche energy rated faster switching lower leakage power mos v ? fredfet to-264 max fast recovery body diode downloaded from: http:///
050-5994 rev a 5-2004 dynamic characteristics apt10030l2vfr source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -33a) peak diode recovery dv / dt 5 reverse recovery time(i s = -33a, di / dt = 100a/s) reverse recovery charge(i s = -33a, di / dt = 100a/s) peak recovery current(i s = -33a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 33 132 1.3 18 t j = 25c 310 t j = 125c 625 t j = 25c 2.0 t j = 125c 6.0 t j = 25c 15 t j = 125c 26 symbol r jc r ja min typ max 0.15 40 unitc/w characteristicjunction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 5.88mh, r g = 25 ? , peak i l = 33a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 33a di / dt 700a/s v r 1000v t j 150 c apt reserves the right to change, without notice, the specifications and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 500v i d = 33a @ 25c v gs = 15v v dd = 500v i d = 33a @ 25c r g = 0.6 ? min typ max 10600 1000 500585 55 265 1416 75 14 unit pf nc ns characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.160.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.5 0.1 0.3 0.7 0.9 0.05 downloaded from: http:///
050-5994 rev a 5-2004 typical performance curves apt10030l2vfr r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 5v 5.5v 4v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 4.5v 0 5 10 15 20 25 30 0123 4567 0 1 02 03 04 0 5 06 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 120100 8060 40 20 0 3530 25 20 15 10 50 2.52.0 1.5 1.0 0.5 0.0 i d = 16.5a v gs = 10v 8070 60 50 40 30 20 10 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 v gs =10v v gs =20v normalized to v gs = 10v @ 16.5a v gs =15, 10, 6.5 & 6v 0.05450.0957 0.0487f0.922f power (watts) rc model junctiontemp. ( c) case temperature. ( c) downloaded from: http:///
050-5994 rev a 5-2004 apt10030l2vfr c rss c iss c oss v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 1000 0 10 20 30 40 50 0 100 200 300 400 500 600 700 800 0.3 0.5 0.7 0.9 1.1 1.3 1.5 132 5010 51 1612 84 0 t c =+25c t j =+150c single pulse 10ms 1ms 100s t j =+150c t j =+25c v ds = 500v v ds = 200v v ds = 800v i d = 33a 30,00010,000 1,000 100200 100 10 1 operation here limited by r ds (on) to-264 max tm (l2) package outline 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030)1.30 (.051) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. downloaded from: http:///
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